Mouser Electronics, Inc., is now stocking QPD1025L gallium nitride (GaN) on silicon carbide (SiC) transistors from Qorvo. Operating with 1.8 kW at 65 V, the QPD1025 is the industry’s highest-power GaN-on-SiC radio frequency transistor, delivering the high signal integrity and extended reach essential for L-band avionics and identification friend or foe (IFF) applications.
The proven performance and reliability of GaN technology makes it an ideal choice for infrastructure, defense and aerospace applications such as radar, communications, navigation, and similar applications. The increased performance capabilities offer designers the flexibility to reduce board space and system costs while improving system performance.
The Qorvo QPD1025L, available from Mouser Electronics, is a high-electron-mobility transistor (HEMT) that supports both pulsed and continuous wave (CW) operations to more efficiently offer performance comparable to silicon-based LDMOS devices. Powered from a 65 V rail, the device offers 22.5 dB linear gain and a typical power-added efficiency (PAE3dB) of 77.2 percent. The QPD1025L transistor feature internal input prematch, which simplifies external board match and saves board space.
The lead-free, RoHS-compliant transistor is supported by the QPD1025L evaluation board.
To learn more about the QPD1025L transistor, visit www.mouser.com/qorvo-qpd1025l-rf-transistors.
