600-V GaN FET Power Stages Doubles Power Density in Industrial & Telecom Applications

New TI portfolio of ready-to-use, 600-V GaN FET power stages supports applications up to 10 kW

66

Backed by 20 million hours of device reliability testing, high-voltage GaN FET with integrated driver and protection doubles power density in industrial and telecom applications

Texas Instruments announced a new portfolio of ready-to-use, 600-V gallium nitride (GaN), 50-mΩ and 70-mΩ power stages to support applications up to 10 kW. The LMG341x family enables designers to create smaller, more efficient and higher-performing designs compared to silicon field-effect transistors (FETs) in AC/DC power supplies, robotics, renewable energy, grid infrastructure, telecom and personal electronics applications.

TI’s family of GaN FET devices provides a smart alternative to traditional cascade and stand-alone GaN FETs by integrating unique functional and protection features to simplify design, enable greater system reliability and optimize the performance of high-voltage power supplies. With integrated <100-ns current limiting and overtemperature detection, the devices protect against unintended shoot-through events and prevent thermal runaway, while system interface signals enable a self-monitoring capability.

Key features and benefits of the LMG3410R050, LMG3410R070 and LMG3411R070

  • Smaller, more efficient solutions: TI’s integrated GaN power stage doubles power density and reduces losses by 80 percent compared to silicon metal-oxide semiconductor field-effect transistors (MOSFETs). Each device is capable of fast, 1-MHz switching frequencies and slew rates of up to 100 V/ns.
  • System reliability: The portfolio is backed by 20 million hours of device reliability testing, including accelerated and in-application hard switch testing. Additionally, each device provides integrated thermal and high-speed, 100-ns overcurrent protection against shoot-through and short-circuit conditions.
  • Devices for every power level: Each device in the portfolio offers a GaN FET, driver and protection features at 50 mΩ or 70 mΩ to provide a single-chip solution for applications ranging from sub-100 W to 10 kW.

Package, availability and pricing

These devices are available now in the TI store in 8-mm-by-8-mm split-pad, quad flat no-lead (QFN) packaging. The LMG3410R050, LMG3410R070 and LMG3411R070 are priced at US$18.69, $16.45 and $16.45, respectively, in 1,000-unit quantities.

LEAVE A REPLY