In an exclusive interview at STMicroelectronics’ booth during electronica India 2024, Maurizio Giudice, the General Manager of the High Voltage Division of STMicroelectronics had an exclusive sit down with our editor, Pratibha Rawat, to discuss the pivotal advancements shaping the future of power semiconductor technologies. With a focus on the groundbreaking super junction (SJ) structure, Giudice highlighted super junction role as a milestone in the evolution of MOSFETs. He also offered insights into the shift towards wide bandgap (WBG) materials and the continued relevance of silicon-based technologies. Maurizio shared about ST’s strategic approach to innovation and maintaining leadership in the rapidly evolving power electronics market.
Why is the super junction (SJ) structure well-known as a “milestone” in the history of power devices, especially for MOSFETs?
Maurizio Giudice: The super junction (SJ) structure is considered a milestone in the history of power devices due to its significant improvements in efficiency and performance. Traditional MOSFETs faced limitations in terms of on-resistance, which restricted their performance in high-power applications. The SJ (Multiple Drain) structure addresses these limitations by introducing a multi-layered design that allows for lower on-resistance. This results in reduced power losses and improved efficiency, making SJ MOSFETs ideal for applications in the industrial, automotive, and consumer sectors. For instance, STMicroelectronics’ M9 and K6 series of SJ MOSFETs exemplify these advancements by providing superior performance and reliability in demanding applications.
What is your intake on “the shift from silicon to WBG materials” and what reasons to support continued investment in Silicon?
Maurizio Giudice: The shift from silicon to wide bandgap (WBG) materials like Silicon Carbide (SiC) and Gallium Nitride (GaN) is driven by the superior properties of WBG materials, such as higher efficiency, faster switching speeds, and better thermal management. These advantages make WBG materials particularly suitable for high-power and high-frequency applications, such as electric vehicles and renewable energy systems.
However, continued investment in silicon is still crucial. Silicon-based technologies are well-established, cost-effective, and have a robust manufacturing ecosystem. They continue to be the backbone of many applications where their performance is more than sufficient, and the cost advantages are significant. For example, STMicroelectronics continues to innovate in silicon-based technologies, as seen with their advanced M9 and K6 series of SJ MOSFETs, which offer improved efficiency and performance for a wide range of applications. High quality & reliability and large installed capacity of Epi Reactors are a large barrier to new entries.
Could you provide an overview of the recent advancements in STPOWER MOSFETs and share insights into your super-junction technology roadmap?
Maurizio Giudice: STMicroelectronics has made significant advancements in its STPOWER MOSFETs, focusing on improving efficiency, reliability, and performance. Recent innovations include the development of advanced super-junction MOSFETs, such as the M9 and K6 series, which offer lower on-resistance and higher switching speeds. These improvements are crucial for applications in electric vehicles, industrial automation, and renewable energy systems. Last but not least, an outstanding new technologies roadmap is cooking in our R&D kitchen.
Our super-junction technology roadmap includes continuous enhancements in material quality, fabrication processes, and thermal management solutions. We are also investing in vertically integrated manufacturing facilities to ensure high-quality production and to meet the growing demand for high-performance power devices.
From ST’s perspective, how do wide band gap semiconductors influence the current market, and what opportunities do you foresee in this area?
Maurizio Giudice: Wide bandgap (WBG) semiconductors like SiC and GaN are transforming the current market by enabling higher efficiency and performance in power electronics. These materials are particularly influential in sectors such as automotive, industrial, and renewable energy, where they offer significant advantages over traditional silicon-based devices. WBG will basically enlarge the TAM of power transistors.
Could you discuss the advancements in technologies with new materials and packaging, and how these developments impact the market? Additionally, how does ST plan to address these changes to maintain its market position?
Maurizio Giudice: Advancements in new materials like SiC and GaN, coupled with innovative packaging technologies, are driving significant changes in the semiconductor market. These developments lead to higher efficiency, better thermal management, and more compact designs, which are crucial for modern applications.
STMicroelectronics is addressing these changes by investing in state-of-the-art manufacturing facilities, strategic partnerships, and continuous R&D. For instance, our new SiC Campus in Italy is a testament to our commitment to enhancing material quality and production capacity. By staying at the forefront of technological advancements and maintaining a robust ecosystem, ST aims to strengthen its market position and continue delivering cutting-edge solutions to its customers.
