Mouser Electronics, Inc., the authorized global distributor of the newest electronic components and industrial automation products, is now offering the new RY7P250BM power MOSFET from ROHM Semiconductor. The RY7P250BM is optimized for hot-swap circuits in 48V power systems used in AI servers, data centers, industrial equipment, and energy storage applications.
As the power efficiency and current demands of generative AI and high-performance GPUs continue to increase, ROHM’s latest MOSFET offers a wide Safe Operating Area (SOA) that enables it to withstand higher voltages while protecting against damaging inrush currents and overloads. Delivering 16A at 10ms and 50A at 1ms, it ensures stable performance under heavy loads that far exceed the limits of conventional MOSFETs, significantly improving overall system reliability and efficiency.
The RY7P250BM also serves as a drop-in replacement for existing designs, allowing safe module swaps while systems remain powered on. Features include a 100V drain-source voltage (VDSS), ±300A drain current (ID), and 340W power dissipation (PD), all housed in a compact 8080-size package. In addition, the MOSFET achieves an industry-leading low ON-resistance of 1.86mΩ (VGS=10V, ID=50A, Tj=25°C), approximately 18% lower than conventional 2.28mΩ wide-SOA 100V MOSFETs of the same size, minimizing both power loss and heat generation in hot-swap controller (HSC) and AI server applications.
To learn more, visit https://www.mouser.com/new/rohm-semiconductor/rohm-ry7p250bm-power-mosfet/.
