The District Court Munich, Germany ruled in favor of Infineon Technologies AG in a first instance patent infringement case concerning gallium nitride (GaN) technology between Infineon and Innoscience. The case centers on the unauthorized use of Infineon’s patented GaN technologies by Innoscience. GaN plays a pivotal role in enabling high-performance and energy-efficient power systems in a broad range of applications, including renewable energy systems, data centers, industrial automation, and electric vehicles (EVs).
The Munich court’s decision was issued in a patent infringement case brought by Infineon against Innoscience. The Munich District Court found that Infineon´s patent was infringed by GaN products that Innoscience is offering in Germany. The decision in particular prohibits Innoscience from manufacturing, selling, or marketing the infringing products in Germany. Additionally, the decision requires Innoscience to pay damages to Infineon.
The decision of the District Court underscores the value of Infineon’s contributions to GaN technology and its ongoing commitment to ensuring fair competition in the market. “The ruling is a testament to the strength of Infineon’s intellectual property and confirms Infineon’s commitment to vigorously defend its intellectual property against infringements,” says Johannes Schoiswohl, Senior Vice President and Head of Infineon’s GaN Systems Business Line.
Infineon continuously strengthens its position as a leading integrated device manufacturer (IDM) in the GaN market with the industry’s broadest IP portfolio, comprising approximately 450 GaN patent families. The company remains dedicated to fostering innovation and advancing semiconductor technology to address the world’s most pressing challenges, from decarbonization to digital transformation.
For more information visit https://www.infineon.com/.
