Semiconductor News in India - Electronicsmedia

Semiconductor

Here is your latest news and updates from the Semiconductor Sector in India, and the Future of the semiconductor industry in India.

IGBT7 modules

Infineon adds new current ratings to its 1200 V TRENCHSTOP IGBT7

Infineon Technologies AG adds new current ratings to its 1200 V TRENCHSTOP IGBT7 modules. This completes the Easy 1B and 2B portfolio,...
GaN Technology

GaN Technology Increases Output Power of High-Efficiency Display PSUs to 75 W

Power Integrations announced that its InnoSwitch 3-MX isolated switcher IC family has been expanded with the addition of three new PowiGaN devices. As part of a chipset with...

New 2.8W High Power Speaker Amp ICs for Advanced Instrument Clusters

ROHM recently announced the AEC-Q100 qualified 2.8W output Class AB monaural speaker amplifiers the BD783xxEFJ-M series (BD78306EFJ-M, BD78310EFJ-M and BD78326EFJ-M) ideal for instrument clusters...

SiC switches: Their Characteristics, Benefits and Applications

Wide band gap (WBG) semiconductors have been a ‘hot’ topic for some years now and have firmly transitioned from being tomorrow’s technology...
Filippo, Di Giovanni, STMicro

“ST is a market leader in SiC & GaN markets and extremely optimistic on...

Electronics Media  editor Pratibha Rawat interviewed Filippo, Di Giovanni, Director Strategic Marketing, Innovation, and Key Programs, Power Transistor Division, STMicroelectronics , about STMicroelectronics(ST)  growing investment in...
SiC MOSFETs

New 900 V & 1200 V SiC MOSFETs launched by ON Semiconductor

ON Semiconductor added two families of silicon carbide (SiC) MOSFET to its wide bandgap (WBG) devices portfolio.Intended for use...
Super Junction MOSFETs

700V & 600V Super Junction MOSFETs in SMD-type Packages

Alpha and Omega Semiconductor announced the release of 700V and 600V αMOS5™ Super Junction MOSFET families in SMD-type DFN5x6 and DFN8x8 packages. αMOS5 is...
STMicroelectronics to accelerate GaN expertise with Exagan

STMicroelectronics to accelerate GaN expertise with Exagan acquisition

STMicroelectronics has signed an agreement to acquire a majority stake in French Gallium Nitride (GaN) innovator Exagan. Exagan’s expertise in epitaxy, product...
600 V CoolMOS

600 V CoolMOS S7 super junction MOSFET for low-frequency applications

Infineon launched 600 V CoolMOS S7 product family leads the way for power density and energy efficiency for applications where MOSFETs...
GaN devices

STMicroelectronics & TSMC Accelerate GaN Adoption

STMicroelectronics and TSMC are collaborating to accelerate the development of Gallium Nitride (GaN) process technology and the supply of both discrete and...

Interview