Highlights:
- Precise and fast characterization of new memory, such as STT-MRAM—from DC measurement to high-speed pulsed IV measurement (down to 1 ns)
- 10 to 100 times faster cycle test, such as performing a bit error rate test (BERT)
- Clear visualization of the MTJ switching waveform
Keysight Technologies, Inc., announced a solution to characterize magnetic tunnel junction (MTJ) for spin transfer torque magnetoresistive random access memory (STT-MRAM) to overcome challenges of conventional rack and stack base test environments. Keysight’s new NX5730A High-Throughput 1 ns Pulsed IV Memory test solution is a dedicated solution for researchers and engineers struggling with the characterization of MTJ devices on silicon wafers.
STT-MRAM is getting a lot of attention as the preferred, next-generation high-performance non-volatile memory—such as the memory used in mobile and storage devices. MTJ is the most important component of STT-MRAM, with fast and accurate characterization of MTJ being key success factor for achieving a company’s time-to-market goals.
The NX5730A enables users to apply accurate and high-speed pulsed voltages (down to 1 ns pulse width) to switch MTJ, and to precisely and quickly measure the resistance of MTJ before and after switching. In addition to resistance measurement, the NX5730A allows engineers to capture and visualize MTJ switching waveforms clearly during the writing pulse, even if the pulse width is very narrow (down to 1ns pulse). The NX5730A allows users to accurately and quickly perform all typical MTJ characterization tests in one solution. This includes BERTs, endurance tests, switching characteristics with various voltages and the width of writing pulses, switching time evaluation by visualizing switching waveforms, and DC tests (e.g., resistance-voltage characteristics). Keysight also provides customization support to control electromagnet equipment for characterization with magnetic fields.
“Keysight’s new NX5730A stems from a collaboration with Tohoku University’s Center for Innovative Integrated Electronic Systems (CIES) STT-MRAM activities which resulted in a successful outcome as announced in March of 2015,” said Masaki Yamamoto, general manager of Keysight’s Wafer Test Solutions. “Our customer experiences several challenges in MTJ characterization with conventional rack and stack-base test environments, such as a time-consuming BERT, inaccurate writing voltage and difficulty of high-speed pulsed IV, such as 1 ns pulse widths. The NX5730A is in direct response to our customers’ needs for MTJ characterization, and the NX5730A is already used in multiple memory research facilities, including CIES. Moreover, Keysight continually develops its advance technology under CIES and Keysight collaboration.”
The NX5730A enables accurate characterization through 1) system-level adjustment with dedicated system design, and 2) Keysight’s expertise in RF measurement and system integration. The NX5730A performed approximately 10 to 100 times faster BERTs through faster measurements and optimized system controls. The NX5730A software allows customers to execute all typical MTJ tests only with a few steps. The NX5730A is designed to combine with a semi-automated prober to full-automated prober—making it ideal for STT-MRAM research to early production.
For more information visit: www.keysight.com
