Qorvo GaN-on-SiC High-Electron Mobility Transistor for 4G & 5G Communications now at Mouser

Mouser Electronics is now stocking the QPD0011 high-electron mobility transistor (HEMT) from Qorvo. The gallium nitride-on-silicon carbide (GaN-on-SiC) transistor delivers power and performance for cellular base station and RF applications in 5G massive MIMO, LTE, and WCDMA systems.

The Qorvo QPD0011, available from Mouser Electronics, is an asymmetric, dual-path amplifier in a small, 7.0 mm × 6.5 mm DFN package. Utilizing variable power inputs from 30 W to 60 W and drain voltages of +48 V, the QPD0011 operates between 3.3 GHz and 3.6 GHz and features up to 13.3 dB of gain, for ultra-efficient signal, peak, and power performance (up to 90 W) in Doherty design environments.

For development, Mouser also stocks the QPD0011EVB1 Evaluation Board. The QPD0011EVB1 platform includes an example application circuit, allowing rapid prototyping when incorporated into existing designs. Applications for the QPD0011 include macrocell and microcell base stations, active antennas, and asymmetric Doherty designs.

To learn more about the QPD0011 GaN-on-SiC HEMT, visit https://www.mouser.com/new/qorvo/qorvo-qpd0011-48v-gan-sic-hemt/.