After recently celebrating 25 years of silicon carbide at ST and the beginning of a new era, ST wanted to share a timeline of how we got here. A quarter of a century ago, everything started on one-inch wafers and a close relationship with academia. Today, SiC is transforming electric cars, among many other markets. In the process, ST managed to earn more than 70 patents on SiC, and we continue to dedicate enormous resources to the technology. Here are some of the major milestones of the last 25 years.
25th Anniversary of SiC
1996
June
Collaboration with Academia
Collaboration with the Physics Department of the University of Catania
1998
April
1st Contract On SiC With Research
First contract pertaining to Silicon Carbide. Agreement with the Institute for Microelectronics and Microsystems of the Italian National Research Council (Consiglio Nazionale delle Ricerche, or CNR).
2002
May
Schottky Diode Demonstrator
ST’s first Schottky diode demonstration using Silicon Carbide in partnership with the CNR.
2003
February
Epitaxial Reactor Installation
ETC installs an epitaxial reactor prototype in an ST fab. It’s a first step for the manufacturing of SiC
December
2-Inch Wafers In 2003
ST manufactures Silicon Carbide devices on 2-inch wafers.
2004
May
Schottky Diode Demonstrator
First SiC Schottky diode demonstrator produced by ST.
2006
December
3-Inch Wafers
ST manufactures Silicon Carbide devices on 3-inch wafers.
2007
October
1st Generation SiC Diode
ST mass produces its first generation of Silicon Carbide diodes.
2009
March
First SiC Power MOSFET Demonstrator
We manufacture our first power MOSFET demonstrator on 3-inch wafers.
2011
December
4-Inch Wafers
ST manufactures Silicon Carbide devices on 4-inch wafers.
2012
May
2nd Generation Of SiC Diodes
ST mass produces its second generation of Silicon Carbide diodes.
2014
June
3rd Generation Of SiC Diodes
ST mass produces its third generation of Silicon Carbide diodes.
September
1st Generation Of SiC MOSFETs
ST mass produces its first generation of Silicon Carbide MOSFETs.
2016
December
6-Inch Wafers
ST manufactures Silicon Carbide devices on 6-inch wafers.
2017
June
2nd Generation Of SiC MOSFETs
ST mass produces its second generation of Silicon Carbide MOSFETs.
November
SiC Devices In High End Automotive Applications
By the end of the year, ST silicon carbide power devices integrated commercial vehicles, inaugurating the massive use of SiC in high-end automotive applications.
2020
December
3rd Generation Of SiC Power MOSFETs
ST mass produces its third generation of Silicon Carbide MOSFETs.
2021
July
8-Inch Wafers
ST manufactures Silicon Carbide devices on 8-inch wafers.
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