7th-Gen MXT LV MOSFET

Magnachip Semiconductor has announced the release of four new MXT LV Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFETs), incorporating their advanced Super-Short Channel technology. These cutting-edge MOSFETs are part of Magnachip’s expanded seventh-generation MXT LV MOSFET line-up, specifically designed for battery protection circuits in mobile devices.

The innovative Super-Short Channel technology developed by Magnachip aims to minimize Ron, the resistance of MOSFETs during on-state operation, by significantly shortening the channel length between the source and the drain. Compared to previous generations, these newly introduced MOSFETs demonstrate an impressive reduction in Ron by 24% to 40%. This enhancement translates into improved battery performance with lower power losses during charging and discharging processes.

In addition, Magnachip provides customized design service for these products, based on the application specifications and battery capacities, so the sizes of the MOSFETs can be reduced by 5 to 20% respectively.

With these technical capabilities, flexible design and compact size options, the extended MXT LV MOSFET line-up satisfies the various technical requirements of a wide range of mobile devices, from premium foldable phones to wireless earphones.

“Magnachip has released five new MXT LV MOSFETs for battery protection circuits so far this year,” said YJ Kim, CEO of Magnachip.  “We will continue to create premium MOSFETs that offer great power efficiency and outstanding performance for mobile devices to solidify our presence in the market.” 

for more information visit: https://www.magnachip.com/