SemiQ Inc, a designer, developer, and global supplier of superior silicon carbide (SiC) solutions for ultra-efficient, high-performance, and high-voltage applications, has expanded its family of 1200 V Gen3 SiC MOSFETs, launching five SOT-227 modules that offer RDSon values of 7.4, 14.5, and 34 mΩ. SemiQ’s GCMS modules, which feature Schottky Barrier Diodes (SBDs), have lower switching losses at high temperature, especially compared to non-SBDs GCMX modules.
The devices target medium-voltage, high-power conversion applications, including battery chargers, photovoltaic inverters, server power supplies, and energy storage systems. All parts are screened using wafer-level gate-oxide burn-in tests exceeding 1400 V and are avalanche tested to 800 mJ (330 mJ for 34 mΩ modules).
All modules are highly rugged, easy to mount, and feature an isolated backplate as well as direct mounts for a heat sink. They have been engineered to enhance performance and switching speeds while minimizing losses in such applications. The 7.4 mΩ GCMX007C120S1-E1 reduces switching losses to 4.66 mJ (3.72 mJ Turn on, 0.94 mJ Turn off) and has a body diode reverse recovery charge of 593 nC.
Their junction-to-case thermal resistance ranges from 0.23°C/W for the 7.4 mΩ MOSFET module to 0.70°C/W for the 34 mΩ MOSFET module.
Dr. Timothy Han, President at SemiQ said: “The expansion of our third-generation 1200 V SiC MOSFET family marks another key milestone in SemiQ’s mission to deliver superior silicon carbide solutions for high-performance power applications. By broadening our portfolio with lower resistance options and rugged, easy-to-mount SOT-227 packages, we’re empowering designers to achieve higher efficiency, faster switching, and greater reliability across a wide range of energy and industrial systems.”
For further information and specifications on the Gen3 SOT-227 modules, please visit SemiQ.com. Samples and volume pricing are available upon request.
