Summary: onsemi announced it has signed a memorandum of understanding with Innoscience to explore expanding production of gallium nitride (GaN) power devices using Innoscience’s proven 200mm GaN-on-silicon process. The collaboration would combine onsemi’s system integration, drivers, and packaging expertise with Innoscience’s GaN wafers and high-volume manufacturing leadership in an effort to bring cost-effective, energy-efficient solutions to market faster and accelerate GaN adoption.
News Highlights:
- Collaboration would expand onsemi’s low and medium-voltage GaN power portfolio and scale GaN manufacturing worldwide for faster market availability and greater adoption.
- The non-binding MOU outlines a strategic partnership, including wafer procurement and extended collaboration, leveraging onsemi’s GaN power solutions and Innoscience’s leading wafer manufacturing to target the projected $2.9 billion total addressable market by 2030 for GaN power devices, with the potential value in the hundreds of million dollars for both companies.
- The arrangement would assist onsemi and Innoscience in their efforts to deliver significant customer value, specifically by combining onsemi’s expertise in packaging, drivers, and systems integration with Innoscience’s proven wafer manufacturing capabilities.
- The two companies’ technologies together are expected to enable smaller, more efficient GaN solutions for industrial, automotive, telecom infrastructure, consumer, and AI data center markets.
onsemi and Innoscience announced the signing of a memorandum of understanding (MoU) to evaluate opportunities to accelerate deployment of GaN power devices, starting with 40-200V, and significantly broaden customer adoption. The collaboration outlined in the MoU brings together onsemi’s leadership in integrated systems and packaging with Innoscience’s proven GaN technology and high-volume manufacturing to enable delivery of cost-effective, highly efficient GaN products for industrial, automotive, telecom infrastructure, consumer and AI data center markets.
GaN semiconductor devices offer higher switching speeds, smaller form factors, and lower energy losses to deliver more power in less space. Until now, limited offerings and manufacturing capacity have slowed GaN adoption in the low and medium-voltage segment. Through this collaboration, onsemi and Innoscience will seek to overcome these barriers to quickly bring high-volume, worldwide deployment of optimized GaN solutions for mainstream markets:
- Industrial: motor drives for robotics, solar microinverters, and optimizers
- Automotive: DC-DC converters, synchronous rectification
- Telecom Infrastructure: DC-DC and point-of-load converters
- Consumer and Mass Market: power supplies, adaptors, DC-DC converters, motor drives, audio, light e-mobility, power tools, robotics
- AI Data Center: intermediate bus converters, DC-DC converters, battery backup units
For onsemi customers, the collaboration with Innoscience would enable:
- Faster Time to Market: Rapid prototyping, accelerated design-in, and swift entry into mainstream markets with onsemi’s system expertise and Innoscience’s proven GaN technology and manufacturing
- Scalable Manufacturing: True mass-market scalability to handle large-volume ramps, leveraging onsemi’s global integration and packaging experience and Innoscience’s established GaN capacity
- Lower System Cost: Optimized package, fewer components and simplified thermal management deliver more compact designs and lower total system cost
“As power demands rise across every sector, GaN offers higher efficiency, smaller size, and lower energy losses compared to other materials. Until now, in the low and medium voltage segments, cost and supply constraints have limited its widespread adoption. Through a collaboration with Innoscience, we expect to be able to access the industry’s largest GaN production footprint and quickly scale our GaN offerings for customers worldwide to enable broader adoption in mainstream power applications.” – Antoine Jalabert, Vice President of Corporate Strategy, onsemi
“GaN technology is essential to improving electronics, creating smaller, more efficient power systems, saving electric power, and reducing CO2 emissions. Innoscience is excited to explore a strategic collaboration opportunity with onsemi, to expand and accelerate the adoption of GaN power worldwide, and to create a system integration platform with onsemi’s broad portfolio.” – Yi Sun, Senior Vice President, Product & Engineering
A Complete Intelligent Power Portfolio
GaN is projected to capture an estimated $2.9 billion, or 11% share, of the global power semiconductor market by 2030, with a projected compound annual growth rate from 2024-2030 of 42%. This collaboration with Innoscience would build on onsemi’s comprehensive intelligent power portfolio, which now spans silicon, silicon carbide (SiC), and GaN technologies. Together, these technologies enable onsemi to deliver the optimal power system for application across AI data center, automotive, industrial, and consumer. This complete low and medium voltage portfolio strengthens onsemi’s position as a leading provider of fully integrated power systems to help customers maximize performance and energy efficiency as global electrification and AI-energy demand continues to surge.
Timing and Availability
onsemi expects to begin sampling in the first half of 2026.
