New 175°C AEC-Q101 MOSFETs in miniature leadless packages from Nexperia enable automated inspection
Nexperia announced the industry's first AEC-Q101-qualified MOSFETs that are both rated for use at up to 175 °C and are available in the AOI-compatible DFN2020 package (DFN...
ON Semiconductor’s Solution for Portable Device Power Adapters
ON Semiconductor (Nasdaq: ON), driving energy efficient innovations, has announced that its NCP1568 active clamp flyback (ACF) controller and corresponding NCP51530 high-speed, half-bridge driver have won a Top...
STMicroelectronics Precision Low-Noise Op Amp with Extended Voltage & Temperature Ranges
The STMicroelectronics TSB712A precision op amp maintains stable parameters over wide voltage and temperature ranges, bringing cost-effective high-end performance to a multitude of applications, including industrial...
Infineon includes 200V half-bridge gate driver IC for reliable start-up operation
Infineon Technologies AG introduced the IRS2007S 200 V half-bridge gate driver IC in a standard SOIC-8 (DSO-8) package. It is a new member of...
To meet High Efficiency Power Semiconductor Devices demand X-FAB Doubles 6-Inch SiC Foundry Capacity
X-FAB Silicon Foundries SE, the leading analog/mixed-signal and specialty foundry group, today announced plans to double their 6-inch Silicon Carbide (SiC) process capacity at...
List of Silicon Carbide Semiconductor Manufacturers
Silicon Carbide (SiC), the member of wide band gap semiconductor is getting traction in power electronics, automotives, wind turbines, solar inverters, photovoltaic market and many...
GLOBALFOUNDRIES realigns leading-edge roadmap to meet client need & establishes wholly-owned subsidiary to design...
GLOBALFOUNDRIES announced an important step in its transformation, continuing the trajectory launched with the appointment of Tom Caulfield as CEO earlier this year. In...
Top 10 Semiconductor supplier growth rates by revenue
Global semiconductor industry revenue grew 4.4 percent, quarter over quarter, in the second quarter of 2018, reaching a record $120.8 billion. Semiconductor growth occurred...
Tripling the output power of Gallium-Nitride Transistors
Fujitsu Limited and Fujitsu Laboratories Ltd. have developed a crystal structure that both increases current and voltage in gallium-nitride (GaN) high electron mobility transistors (HEMT),...
SPDT High-Power PIN Diode RF Switches with 50 Ohm Reflective Designs
Pasternack has unveiled a new line of SPDT high-power PIN diode RF switches that offer desirable performance for transmit and receive signal routing applications. Typical applications...
