Singapore’s IGaN strengthens GaN-based activities
Singapore's IGaN says nation is at the cusp of becoming Asia's epicentre for niche semiconductor technologies in power efficiencies.
Journey of GaN and SiC power semiconductor market
The emerging market for silicon carbide (SiC) and gallium nitride (GaN) power semiconductors is rapidly evolving from a startup-dominated business to one...
SweGaN relocate headquarters – launches new 150mm GaN-on-SiC epiwafer product
SweGaN AB has relocated their headquarters to a new facility in Linköping, Sweden, which combines a lab housing several production tools and an administration...
Breakthrough in AI Chip, Bringing Deep Neural Network Calculations to IoT Edge Devices
Imec and GLOBALFOUNDRIES (GF), announced a hardware demonstration of a new artificial intelligence chip. Based on imec's Analog in Memory Computing (AiMC) architecture...
GaN and SiC power semiconductor to pass $1 billion mark in 2021
The emerging market for silicon carbide (SiC) and gallium nitride (GaN) power semiconductors is forecast to pass $1 billion in 2021, energized...
GF’s 12LP+ FinFET Solution Optimized for AI Accelerator Ready for Production
GLOBALFOUNDRIES the world's leading specialty foundry, announced its most advanced FinFET solution, 12LP+, has completed technology qualification and is ready for production.GF's...
Cool SiC 62 mm module opens up new applications for silicon carbide
Infineon Technologies adds another industry-standard package to its CoolSiC™ MOSFET 1200 V module family. The proven 62 mm device has been designed...
COVID-19 drives demand for PC & server-related chips
Defying a decline in market revenue, the world's top-10 semiconductor suppliers managed to generate revenue growth of 2.1 percent in the first...
Taiwan Tops the list of Largest Base for IC Wafer Capacity
According to Global Wafer Capacity Report 2020-2024 by research firm IC Insights, Taiwan has the Largest Base for IC Wafer Capacity while South...
CMOS Device Fabrication at 500°C Demonstrated
In an FDSOI CMOS processing breakthrough, CEA-Leti scientists have pushed fabrication thermal-process boundaries down to 500°C for CMOS integration, while showing strong...
