QSiC Dual3 Modules – SemiQ Inc, a designer, developer, and global supplier of superior silicon carbide (SiC) solutions for ultra-efficient, high-performance, and high-voltage applications, has expanded its QSiC™ Dual3 family of half-bridge MOSFET modules – adding high-thermal-performance options with AlN (aluminum nitride) substrates and pre-applied TIM (thermal interface material), as well as new 1700 V devices. The expanded family addresses demanding applications such as AC-DC converters and solid-state transformers (SSTs) in AI data center power systems, in addition to grid converters in energy storage systems, and industrial motor drives in chillers and cooling towers.
The family enables the creation of power converters with industry-leading conversion efficiency and power density. Additionally, the series includes an optional parallel Schottky barrier diode (SBD) to further reduce switching losses and improve efficiency in high-temperature environments. Several of the family’s devices exhibit RDSon as low as just 1 mΩ, alongside power levels of 1150A, 1200V from a 62 x 152 mm package.
The QSiC Dual3 has been developed to enable the replacement of IGBT modules with minimal redesign, with all MOSFET die being screened using wafer-level gate-oxide burn-in tests exceeding 1450 V. The modules additionally feature a low junction-to-case thermal resistance and enable a simplified system design with smaller, lighter heatsinks.
“Given that data centers require continuous, round-the-clock operation, maximizing efficiency is critical,” said Dr. Timothy Han, President at SemiQ, “The flexible design and industry-leading power density of our QSiC Dual3 series supports both active front-ends and compressor drives on liquid chiller applications, reducing size and weight compared to traditional silicon IGBT solutions while delivering the full efficiency of SiC.
“And with the new high-thermal-performance options, the modules are also now being designed into the main AC-DC power converters and SSTs. This enables direct conversion from medium-voltage 13.8 kV or 35 kV AC to high-voltage 800 V DC, delivering the ultra-efficient operation that modern data center power systems demand.”
The expanded range of high-thermal-performance options features AlN (aluminum nitride) substrates and pre-applied TIM (thermal interface material), carrying the suffix “-NT” on the standard part numbers. 1700 V 1.7 mΩ devices have also been added – GCMX1P7C170S4B1(-NT) and GCMS1P7C170S4B1(-NT) – and will be available in the coming months.
| Part Numbers | VDC | Package | SBD | RDSon |
| GCMX1P0B120S4B1(-NT) | 1200 V | S4B1 Half Bridge with AlN substrate and TIM | N | 1 mΩ |
| GCMX1P4B120S4B1(-NT) | 1200 V | S4B1 Half Bridge with AlN substrate and TIM | N | 1.4 mΩ |
| GCMX2P0B120S4B1(-NT) | 1200 V | S4B1 Half Bridge with AlN substrate and TIM | N | 2 mΩ |
| GCMS1P0B120S4B1(-NT) | 1200 V | S4B1 Half Bridge with AlN substrate and TIM | Y | 1 mΩ |
| GCMS1P4B120S4B1(-NT) | 1200 V | S4B1 Half Bridge with AlN substrate and TIM | Y | 1.4 mΩ |
| GCMS2P0B120S4B1(-NT) | 1200 V | S4B1 Half Bridge with AlN substrate and TIM | Y | 2 mΩ |
| GCMX1P7C170S4B1(-NT) | 1700V | S4B1 Half Bridge with AlN substrate and TIM | N | 1.7 mΩ |
| GCMS1P7C170S4B1(-NT) | 1700V | S4B1 Half Bridge with AlN substrate and TIM | Y | 1.7 mΩ |
The new lineup will be on display at PCIM in Nuremberg, Germany, from June 9 to 11. To find out more, please visit semiq.com or meet us in person at Alfatec’s stand (Hall 4A, Booth #110).
