1200V aSiC MOSFETs for Electric Vehicle Applications

 Alpha and Omega Semiconductor Limited (AOS) released the new AEC-Q101 qualified 1200V silicon carbide (SiC) aSiC MOSFETs in optimized TO-247-4L package.  Ideal for the high efficiency and reliability requirements of electric vehicle (EV) on-board chargers, motor drive inverters, and off-board charging stations, these 1200V SiC MOSFETs provide the industry-leading lowest on-resistance available for an automotive qualified TO-247-4L with a standard gate drive of 15V.

As the EV market accelerates into millions of units per year, vehicle manufacturers are increasingly implementing 800V electrical systems to reduce the system’s size and weight while increasing range and enabling significantly faster charging speeds.  AOS’s 1200V automotive grade aSiC MOSFETs are specifically designed for these demanding applications by providing superior switching performance and efficiency over standard silicon devices. 

The AOM033V120X2Q is a 1200V / 33mW SiC MOSFET based on our second generation aSiC MOSFET platform packaged in an optimized TO-247-4L.  Unlike the standard 3 lead package, using an additional sense lead reduces the package inductance effects and enables the device to operate at a higher switching frequency with up to 75% reduction in switching losses compared to standard packaging.  The recommended gate driving voltage of only 15V allows for the widest compatibility of gate drivers for ease of adoption in a variety of system designs. In addition, aSiC MOSFETs have a very low increase in on-resistance up to the rated 175° C to minimize power losses and further increase efficiency.

“For the continued transformation of transportation to EV technology, vehicle manufacturers making efforts to increase range and reduce the time spent charging.  With our release of these automotive qualified 1200V aSiC MOSFETs, AOS can provide designers with next generation semiconductor technology to increase these efficiency targets.  Our customers have selected our technology due to the combination of product performance, reliability, and volume capable supply chain,” said David Sheridan, Sr. Director of Wide Bandgap Products at AOS.

The automotive aSiC MOSFET portfolio will expand later this year to include a broader range of on-resistance and additional package options.

Technical Highlights:

  • AEC-Q101 Qualified and PPAP capable
  • Maximum operating junction temperature to 175°C
  • Low on-resistance increase with temperature
  • Low Qrr and robust body diode
  • Kelvin-source connection for fast low-loss switching

Pricing and Availability

AOM033V120X2Q is immediately available for production quantities. Please contact your local sales representative for pricing.

For more information, please visit www.aosmd.com