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Semiconductor

Here is your latest news and updates from Semiconductor, PCB and Circuit industry from around the world.

IGBT7 modules

Infineon adds new current ratings to its 1200 V TRENCHSTOP IGBT7

Infineon Technologies AG adds new current ratings to its 1200 V TRENCHSTOP IGBT7 modules. This completes the Easy 1B and 2B portfolio,...
GaN Technology

GaN Technology Increases Output Power of High-Efficiency Display PSUs to 75 W

Power Integrations announced that its InnoSwitch 3-MX isolated switcher IC family has been expanded with the addition of three new PowiGaN devices. As part of a chipset with...

New 2.8W High Power Speaker Amp ICs for Advanced Instrument Clusters

ROHM recently announced the AEC-Q100 qualified 2.8W output Class AB monaural speaker amplifiers the BD783xxEFJ-M series (BD78306EFJ-M, BD78310EFJ-M and BD78326EFJ-M) ideal for instrument clusters...

SiC switches: Their Characteristics, Benefits and Applications

Wide band gap (WBG) semiconductors have been a ‘hot’ topic for some years now and have firmly transitioned from being tomorrow’s technology...
Filippo, Di Giovanni, STMicro

“ST is a market leader in SiC & GaN markets and extremely optimistic on...

Electronics Media  editor Pratibha Rawat interviewed Filippo, Di Giovanni, Director Strategic Marketing, Innovation, and Key Programs, Power Transistor Division, STMicroelectronics , about STMicroelectronics(ST)  growing investment in...
SiC MOSFETs

New 900 V & 1200 V SiC MOSFETs launched by ON Semiconductor

ON Semiconductor added two families of silicon carbide (SiC) MOSFET to its wide bandgap (WBG) devices portfolio.Intended for use...
Super Junction MOSFETs

700V & 600V Super Junction MOSFETs in SMD-type Packages

Alpha and Omega Semiconductor announced the release of 700V and 600V αMOS5™ Super Junction MOSFET families in SMD-type DFN5x6 and DFN8x8 packages. αMOS5 is...
STMicroelectronics to accelerate GaN expertise with Exagan

STMicroelectronics to accelerate GaN expertise with Exagan acquisition

STMicroelectronics has signed an agreement to acquire a majority stake in French Gallium Nitride (GaN) innovator Exagan. Exagan’s expertise in epitaxy, product...
600 V CoolMOS

600 V CoolMOS S7 super junction MOSFET for low-frequency applications

Infineon launched 600 V CoolMOS S7 product family leads the way for power density and energy efficiency for applications where MOSFETs...
GaN devices

STMicroelectronics & TSMC Accelerate GaN Adoption

STMicroelectronics and TSMC are collaborating to accelerate the development of Gallium Nitride (GaN) process technology and the supply of both discrete and...

Interview