onsemi GaNEXUS GaN FETs – Mouser Electronics, Inc., the authorized global distributor with the newest electronic components and industrial automation products, is now stocking the new GaNEXUS™ gallium nitride field-effect transistors (GaN FETs) from onsemi. The GaNEXUS GaN FETs leverage the wide-bandgap properties of GaN to deliver fast switching, low gate and output charge, and enhanced efficiency for AI, data centers, industrial automation, robotics, and energy infrastructure applications.
The onsemi GaNEXUS GaN FETs, available from Mouser, enable higher operating frequencies, increased power density, and reduced magnetics in power conversion applications across low-, medium-, high-, and ultra-high-voltage ranges. The enhancement-mode discrete GaN high-electron-mobility transistors (HEMTs) offer a voltage range from 40 to 650 volts, including 650 V GaNEXUS Smart GaN FETs with integrated protections to improve reliability and simplify system integration. GaNEXUS solutions are engineered to improve how modern power systems convert and manage energy, helping designers simplify design complexity, accelerate development and qualification, reduce thermal and cooling requirements, and optimize performance across the full power delivery chain.
In low- and medium-voltage systems, including AI servers, 48 V intermediate bus converters (IBCs), battery backup units (BBUs), and motor drives, GaNEXUS enables smaller magnetics, higher power density, improved efficiency, better thermal performance, improved control stability, and reduced switching losses. In higher-voltage applications such as AI power shelves, high-voltage DC-DC conversion, PFC, and LLC power stages, GaNEXUS enables up to 60% reduction in magnetics size in high-frequency AC‑DC and resonant stages, higher power density in PFC, LLC, and HV DC‑DC architectures, and efficiency gains in thermal and operating costs.
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